Abstract

Silver thin film mirrors are attractive candidates for use as specular back reflectors to enhance broadband light absorption via strong optical interference in ultrathin film semiconductor photoabsorbers. However, deposition of metal-oxide absorbers often requires exposure to high temperature in an oxygen atmosphere, conditions that cause thermal etching and degrade the specular reflectance of silver films. Here, we overcome this challenge and demonstrate that epitaxial growth of silver mitigates thermal etching under the high-temperature oxygen-containing environments that cause polycrystalline films to degrade. The degree of thermal etching resistance is related to the epitaxial film structure, where high-quality films completely prevent thermal etching, allowing for direct deposition of metal-oxide thin film photoabsorbers at elevated temperatures without any degradation of the optical properties of the silver layer. As a proof of concept for device applications, a metal-oxide photoanode for photoelectrochemical water splitting is fabricated by directly growing epitaxial SnO2 and Ti-doped α-Fe2O3 (hematite) thin films onto stabilized silver reflectors by pulsed laser deposition. The photoanode displays enhanced broadband light absorption due to strong interference effects enabled by the highly reflective silver film and demonstrates stable operation in a photoelectrochemical cell under conditions of water photo-oxidation in alkaline electrolyte.