Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures


Journal article


Daniel A. Grave, Joshua A. Robinson, Douglas E. Wolfe
Thin Solid Films, vol. 589, 2015, pp. 194-198

Cite

Cite

APA
Grave, D. A., Robinson, J. A., & Wolfe, D. E. (2015). Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures. Thin Solid Films, 589, 194–198.

Chicago/Turabian
Grave, Daniel A., Joshua A. Robinson, and Douglas E. Wolfe. “Micron Thick Gd2O3 Films for GaN/AlGaN Metal–Oxide–Semiconductor Heterostructures.” Thin Solid Films 589 (2015): 194–198.

MLA
Grave, Daniel A., et al. “Micron Thick Gd2O3 Films for GaN/AlGaN Metal–Oxide–Semiconductor Heterostructures.” Thin Solid Films, vol. 589, 2015, pp. 194–98.


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