Microstructure, phase transition, and interfacial chemistry of Gd2O3/Si(111) grown by electron-beam physical vapor deposition


Journal article


Xiaojun Weng, Daniel A. Grave, Zachary R. Hughes, Douglas E. Wolfe, Joshua A. Robinson
Journal of Vacuum Science \& Technology A, vol. 30, 2012, p. 041512

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Cite

APA   Click to copy
Weng, X., Grave, D. A., Hughes, Z. R., Wolfe, D. E., & Robinson, J. A. (2012). Microstructure, phase transition, and interfacial chemistry of Gd2O3/Si(111) grown by electron-beam physical vapor deposition. Journal of Vacuum Science \&Amp; Technology A, 30, 041512.


Chicago/Turabian   Click to copy
Weng, Xiaojun, Daniel A. Grave, Zachary R. Hughes, Douglas E. Wolfe, and Joshua A. Robinson. “Microstructure, Phase Transition, and Interfacial Chemistry of Gd2O3/Si(111) Grown by Electron-Beam Physical Vapor Deposition.” Journal of Vacuum Science \& Technology A 30 (2012): 041512.


MLA   Click to copy
Weng, Xiaojun, et al. “Microstructure, Phase Transition, and Interfacial Chemistry of Gd2O3/Si(111) Grown by Electron-Beam Physical Vapor Deposition.” Journal of Vacuum Science \&Amp; Technology A, vol. 30, 2012, p. 041512.


BibTeX   Click to copy

@article{weng2012a,
  title = {Microstructure, phase transition, and interfacial chemistry of Gd2O3/Si(111) grown by electron-beam physical vapor deposition},
  year = {2012},
  journal = {Journal of Vacuum Science \& Technology A},
  pages = {041512},
  volume = {30},
  author = {Weng, Xiaojun and Grave, Daniel A. and Hughes, Zachary R. and Wolfe, Douglas E. and Robinson, Joshua A.}
}


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