Microstructure, phase transition, and interfacial chemistry of Gd2O3/Si(111) grown by electron-beam physical vapor deposition


Journal article


Xiaojun Weng, Daniel A. Grave, Zachary R. Hughes, Douglas E. Wolfe, Joshua A. Robinson
Journal of Vacuum Science \& Technology A, vol. 30, 2012, p. 041512

Cite

Cite

APA
Weng, X., Grave, D. A., Hughes, Z. R., Wolfe, D. E., & Robinson, J. A. (2012). Microstructure, phase transition, and interfacial chemistry of Gd2O3/Si(111) grown by electron-beam physical vapor deposition. Journal of Vacuum Science \& Technology A, 30, 041512.

Chicago/Turabian
Weng, Xiaojun, Daniel A. Grave, Zachary R. Hughes, Douglas E. Wolfe, and Joshua A. Robinson. “Microstructure, Phase Transition, and Interfacial Chemistry of Gd2O3/Si(111) Grown by Electron-Beam Physical Vapor Deposition.” Journal of Vacuum Science \& Technology A 30 (2012): 041512.

MLA
Weng, Xiaojun, et al. “Microstructure, Phase Transition, and Interfacial Chemistry of Gd2O3/Si(111) Grown by Electron-Beam Physical Vapor Deposition.” Journal of Vacuum Science \& Technology A, vol. 30, 2012, p. 041512.


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